IGBT module and Applications
时间：
地点：浙江大学玉泉校区电机工程楼408室
讲座内容：
18th Dec. 1) Parallel connection
2) Application & Device Selection
3) EMC
4) Others
19th Dec. 5) IPM
6) Advancing Power Devices
7) Others
主讲人：
Dr. Yasukazu SEKI received B.S., Master and Ph.D. degrees in Electrical Engineering from Tokyo University of Science in 1975, 1977 and 1981, respectively.
After receiving Ph.D degree, he joined Fuji Electric, Co.,Ltd.
Dr. Seki is now Senior Chief Engineer of Corporate R&D Headquarters in Fuji Electric Co.,Ltd in
Dr. Seki has over 30 years of experience in the field of power devices and power electronics technology. Especially, he has mainly charged in IGBT device design and development in Fuji Electric from 1981 to 2010, and he was the member of first production of Fuji IGBT in 1985. Recently, he takes part in SiC device development for the future power devices. In addition, he participates Fuji Working Group member of new applications using with SiC devices.
Dr. Seki was a General Chair of ISPSD 2010 and is also an Advisory Board Member of ISPSD (International Symposium of Power Devices and ICs) and an Advisory Board Member of PCIM in
欢迎各位老师、本科高年级及研究生同学积极参加！
电气工程学院应用电子学系
2015. 12
