IGBT Modules and Applications
时间：
地点：浙江大学玉泉校区电机工程楼408室
讲座内容：
Power Electronics and power semiconductor devices can be found in a wide variety of applications, from consumer electronics to electric railways, FA systems and the like. Moreover, power electronics are used not only in power-consuming applications, but their use has also spread to the fields of power generation, transmission and power supply, such as areas of wind power generators, solar power generators, and uninterruptible power supplies (UPS).
This lecture will focus on one of the key power devices, IGBT modules, and their applications. This lecture consists of three stages, each of which spends two days, and included topics are listed as follows：
Ø Thermal Property
Ø Lifetime Limitations
Ø Simulation of Power Loss for IGBTs
主讲人： Naoto Fujishima
Dr. Naoto Fujishima received B.S. degree in Electrical Engineering from
He is currently the Senior Manager of Device Development Dept. in the Electronic Devices Business Group in Fuji Electric. His current responsibilities include development of silicon and silicon carbide power devices. His current research interests relate to the trend of market and technologies about power electronics and power semiconductor devices which contribute to future energy distribution.
Dr. Fujishima has 30 years of experience in the field of power devices and power ICs. His expertise spans a wide variety of device design, circuit design, fabrication techniques, and characterization of power devices and power ICs.
Dr. Fujishima is a board member of PCIM-Asia and a technical committee member of ISPSD, and has authored more than 20 scientific papers and held 41
欢迎各位老师、本科高年级及研究生同学积极参加！
电气工程学院应用电子学系
2017. 10
