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High-Performance Vertical Gallium Nitride (GaN) Diodes and Transistors for Power Electronics 每 Talk by Mr Zhang from MIT

Edited byㄩzx Date:2017-03-30 15:03

Mr Yuhao Zhang, a Ph. D. candidate from Massachusetts Institute of Technology, delivered a talk: High-Performance Vertical Gallium Nitride (GaN) Diodes and Transistors for Power Electronics to those attended this Wednesday on Mar 29, 2017.

Mr Zhang presented in his talk that a new generation of power electronics based on wide bandgap semiconductors was expected to significantly reduce the losses in power conversion circuits and, at the same time, change the form factor of power systems through a significant increase in the power density. Overall, energy savings greater than 10% of the world’s energy consumption could be possible. In particular, Gallium nitride (GaN) devices were very exciting candidates for next-generation power electronics, for the applications in electrical vehicles, data centers, high-power and high-frequency communications (e.g. 5G, satellites broadcasting, etc.). According to Mr Zhang, both lateral and vertical structures were currently considered for GaN power devices. Compared to the extensively-studied lateral GaN devices, vertical GaN power devices had attracted increased attention recently, due to the potential for high breakdown voltage and current without enlarging the chip size as well as superior thermal performance. He further introduced a new generation of vertical GaN diodes and vertical FETs that addressed the challenges of conventional GaN devices. The prospects of emerging power devices based on other wide-bandgap materials, e.g. diamond, aluminum nitride and gallium oxide, and introduce my work on GaN-diamond integrated devices were discussed as well.

Mr Zhang is a Ph. D. candidate working with Professor Tomas Palacios in the Department of EECS at Massachusetts Institute of Technology, and will graduate in this June. He is interested in novel wide-bandgap semiconductor devices for power electronics and mm-Wave switching. He received his B. S. from Peking University in physics in 2011, and an M. S. from Massachusetts Institute of Technology in electrical engineering in 2013. During his graduate research, he has published over 10 first-authored papers in top journals and conferences, including two first-authored papers in Proceedings of IEEE International Electron Meetings (IEDM). Besides, he has also made over 10 presentations or invited talks in international conferences, and has 6 pending or issued U. S. patents.



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