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学术报告:GaN-on-Si Power Devices and IC’s: a Look into the Gate Structure

发布日期:2017-08-21  作者:  编辑:keyanke  访问量:58

 GaN-on-Si Power Devices and IC’s: a Look into the Gate Structure

Prof. Kevin J. Chen (陈敬教授)
Department of Electronic and Computer Engineering
The Hong Kong University of Science and Technology
Email: eekjchen@ust.hk
报告时间:2017 年8 月28 日上午10:00
报告地点:浙江大学玉泉校区电机工程楼201
Abstract: Wide-bandgap GaN-based power electronic devices are emerging as promising
candidates for next generation power converters with high efficiency and high power density.
Currently, the dominant platform for developing commercial GaN power electronic devices is
based on lateral heterojunctions (e.g. AlGaN/GaN) grown on large-size, low cost silicon
substrates. The ability to manufacture GaN-on-Si power devices in existing fully-depreciated
silicon fabrication lines offers further cost competitiveness. Meanwhile, the high-level
integration capability of this planar device technology is being explored by integrating gate
driver and sensing/protection circuits for enhanced performance and functionality.
The gate terminal is at the key interface between the GaN power switches and driver, and
plays a deciding role in the acceptance of a power device technology by circuit/system designers.
In this talk, we will take a close look at various GaN power transistor technology from the view
of the gate structure. The device reliability and driving requirement for each specific gate
structure will be discussed. The power IC development will also be discussed from the gate
driving point of view. GaN-on-Si power devices with increasing level of integration are expected
to pave the way toward intelligent power conversion modules and sub-systems with higher
efficiency and higher power density.
Biography: Prof. Kevin J. Chen received his B.S. degree from Peking
University, Beijing, China in 1988, and PhD degree from University of
Maryland, College Park, USA in 1993. He has obtained industry
experience by conducting R&D work on III-V high-speed device
technology in NTT LSI Laboratories, Japan and Agilent Technologies,
USA. Prof. Chen joined Hong Kong University of Science and
Technology (HKUST) in 2000, where he is currently a professor in the
Department of Electronic and Computer Engineering. Prof. Chen has
more than 400 publications in international journals and conference
proceedings. He has been granted 10 US patents on GaN electron device
technologies. His research is currently focused on developing GaN
device technologies for high-power and high-frequency applications.
He is a Fellow of IEEE. He is a member of the technical committee on power
semiconductor devices and ICs in IEEE Electron Device Society. He is a guest editor for the
2013 special issue of IEEE Transactions on Electron Device on “GaN Electronic Devices”. He is
currently an editor for IEEE Transactions on Electron Devices, and has served as an editor for
IEEE Transactions on Microwave Theory and Techniques and Japanese Journal of Applied
Physics.

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