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2014年电气论坛第17次活动-学术报告--The process technology of SiC

发布日期:2014-07-08  作者:  编辑:xh  访问量:443

时间:711(周五)上午9:30

地点:玉泉校区应电楼401

主持人:盛 教授

报告人:Dr.-Ing. Anton Bauer(德国)

报告介绍:

The Fraunhofer Institute of Integrated Circuits Dept. B (IISB) in Erlangen in Germany has a so called π-fab. This fab is focused on the SiC technology for power devices, such as diodes and MOS FET's. This presentation will focus on the whole technology and results of SiC devices achieved in the π-fab.

   Anton J. Bauer received his Diploma in physics from the University Regensburg, Germany, in 1988 and his Ph. D. in Electrical Engineering from the University Erlangen Nuremberg, Germany, in 1995. Since 1998, he heads the Technology department at Fraunhofer IISB (Fraunhofer Institute of Integrated Systems and Device Technology). He has expertise in nano-structuring and nano-characterization thin film techniques, processing of thin high-k dielectric films, ion beam techniques, CMOS technology, power electronics, and electrical device characterization. His current research interests include the development of power MOSFETs in Si as well as in silicon carbide (SiC). Especially, the establishment of the π-Fab, a prototype-device fabrication line for custom-tailored Si and SiC services is his main focus at time. Furthermore, he is author or co-author of nearly 200 articles published in referred journals and of three book chapters.

       

 

 

 

 

 

                                                                                                                              主办单位:浙江大学电气学院

 

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