2014年电气论坛第25次活动-High-performance phase-change memory
报告人：Prof. Yin YOU
报告题目：High-performance phase-change memory
Phase-change memory (PCM), widely regarded as the next-generation nonvolatile memory, is based on rapid reversible phase-transformation between amorphous and crystalline phases of chalcogenide such as Ge2Sb2Te5. This presentation will focus on new phase-change materials, multi-level-storage phase-change memory and low-operation-current nano-contact phase-change memory.
He has been a post-doctoral researcher in Satellite Venture Business Laboratory, Gunma University, Japan, since 2003, working on phase-change channel transistor for ultrahigh-density memory. Since 2008, he is an assistant professor in Gunma University and his current research interests are (1) Micro/nano-electronic devices: Phase-change memory (PCM), Resistive random access memory (RRAM); (2) Nano-fabrication: Electron beam lithography, Self assembly; (3) Nano-metrology: Scanning probe microscopy, Atomic force microscopy, Scanning tunneling microscopy. Furthermore, he is author or co-author of 88 articles published in referred journals.