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2014年电气论坛第25次活动-High-performance phase-change memory

发布日期:2014-10-20  作者:  编辑:xh  访问量:452

报告人Prof. Yin YOU

报告题目:High-performance phase-change memory

时间:20141024周五上午9:45-11:00

地点:外经贸楼113教室(玉泉财务报销大厅附近)

   Phase-change memory (PCM), widely regarded as the next-generation nonvolatile memory, is based on rapid reversible phase-transformation between amorphous and crystalline phases of chalcogenide such as Ge2Sb2Te5. This presentation will focus on new phase-change materials, multi-level-storage phase-change memory and low-operation-current nano-contact phase-change memory.

You Yin is currently an assistant professor of Gunma University, Japan. He was born in Sichuan Province, China, in 1975. He majored in solid-state and microelectronics and received the Ph. D. degree in Engineering from Shanghai Jiao Tong University, China, in 2003.

He has been a post-doctoral researcher in Satellite Venture Business Laboratory, Gunma University, Japan, since 2003, working on phase-change channel transistor for ultrahigh-density memory. Since 2008, he is an assistant professor in Gunma University and his current research interests are (1) Micro/nano-electronic devices: Phase-change memory (PCM), Resistive random access memory (RRAM); (2) Nano-fabrication: Electron beam lithography, Self assembly; (3) Nano-metrology: Scanning probe microscopy, Atomic force microscopy, Scanning tunneling microscopy. Furthermore, he is author or co-author of 88 articles published in referred journals.

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