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2017年电气论坛第4次活动--High-Performance Vertical Gallium Nitride (GaN) Diodes and Transistors for Power Electronics

发布日期:2017-03-21  作者:  编辑:jxm  访问量:431

报告人:张宇昊

报告地点:玉泉校区电机工程楼201会议室

报告时间:2017329日上午10:00

报告摘要

A new generation of power electronics based on wide bandgap semiconductors is expected to significantly reduce the losses in power conversion circuits and, at the same time, change the form factor of power systems through a significant increase in the power density. Overall, energy savings greater than 10% of the world’s energy consumption could be possible. In particular, Gallium nitride (GaN) devices are very exciting candidates for next-generation power electronics, for the applications in electrical vehicles, data centers, high-power and high-frequency communications (e.g. 5G, satellites broadcasting, etc.). 

Currently, both lateral and vertical structures are considered for GaN power devices. Compared to the extensively-studied lateral GaN devices, vertical GaN power devices have attracted increased attention recently, due to the potential for high breakdown voltage and current without enlarging the chip size as well as superior thermal performance. In this talk, a new generation of vertical GaN diodes and vertical FETs that addresses the challenges of conventional GaN devices will be described.

The prospects of emerging power devices based on other wide-bandgap materials, e.g. diamond, aluminum nitride and gallium oxide, and introduce my work on GaN-diamond integrated devices will also be discussed.  

 

个人简介:

Yuhao Zhang is a Ph. D. candidate working with Professor Tomas Palacios in the Department of EECS at Massachusetts Institute of Technology, and will graduate in this June. He is interested in novel wide-bandgap semiconductor devices for power electronics and mm-Wave switching. He received his B. S. from Peking University in physics in 2011, and an M. S. from Massachusetts Institute of Technology in electrical engineering in 2013.

During his graduate research, he has published over 10 first-authored papers in top journals and conferences, including two first-authored papers in Proceedings of IEEE International Electron Meetings (IEDM). Besides, he has also made over 10 presentations or invited talks in international conferences, and has 6 pending or issued U. S. patents.

 

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