IGBT Module and Applications
时间:
地点:浙江大学玉泉校区电机工程楼408室
讲座内容:
14:00-14:10 Greeting and Introduction of
14:10-14:40 Impact of SiCon Power Supplies and Drives to Save Energy and Materials,
Speaker: Naoto Fujishima, Fuji Electric Co., Ltd
14:40-15:10 New Concept Package with 1st Generation Trench Gate SiCMOSFETs,
Speaker: Jun Li,
15:10-15:20 Short Break
15:20-15:50 Upgrading of output power by newly developed 7th generation IGBT and package technologies,
Speaker: Song Chen,
15:50-16:20 700kVA/L power density IGBT module for xEVpower train,
Speaker: Akihiro Osawa, Fuji Electric Co., Ltd
16:20-16:30 Q&A and Closing
主讲人:
Naoto Fujishima, Senior Manager Dr. Naoto Fujishima received B.S. degree in Electrical Engineering from Hokkaido University, Japan, in 1985. After the graduation, he joined Fuji Electric, Co., Ltd. Then he received M.S. and Ph.D. degrees both in Electrical and Computer Engineering from
Li Jun,General Manager Mr. Li Jun received B.S. degree in mechanical engineering from South China University of Technology, China in
Chen Song Mr. Chen Song graduated in
Akihiro Osawa Mr. Akihiro Osawa received B.E. degrees in electrical and electronic engineering, from Shinshu University, Nagano, Japan in 2015 and then joined Fuji E lectric Co.,Ltd. He is currently developing IGBT module for EV/HEV applications.
欢迎各位老师、本科高年级及研究生同学积极参加!
电气工程学院应用电子学系 2017, 6