From Oct 19 on to Oct 21, Dr. Naoto Fujishima from Semiconductors Group of Fuji Electric Systems Co., Ltd delivered series of lectures to CEE students with IGBT Modules and Applications as his topic.
Dr. Naoto Fujishima first discussed parallel and series connections of IGBT modules, starting from overall explanation of power electronics and power devices. Snubber circuits were afterward explained in detail as use of over-voltage protection. The final part focused on an overview of Electro Magnetic Compatibility (EMC) issues.
Dr. Naoto Fujishima is currently a general manager of Device Technology Department in the Semiconductors Group of Fuji Electric Systems Co., Ltd. He received B.S. degree in Electrical Engineering from Hokkaido University, Japan, in 1985. Then he received M.S. and Ph.D. degrees both in Electrical and Computer Engineering form University of Toronto, Canada, in 1998 and 2003, respectively. Dr. Fujishima has over 20 years of experience in the field of power devices and power ICs. His expertise spans a wide variety of device design, circuit design, fabrication techniques, and characterization of power devices and power ICs. His current activities encompass design of IGBTs, power MOSFETs, diodes and power ICs. His current research interest is in the area of next-generation power semiconductor devices, such as IGBTs, super junction devices, and wide band gap devices, which contribute to energy saving for environmental protection. Dr. Fujishima is a technical committee member of PCIM-Asia, and has authored more than 20 scientific papers and held 41 U.S. patents and 26 Japanese patents, and is the receiver of a scientific award.
