IGBT Modules and Applications (ZJU-FJU BDU SEMINAR)
Time: 2:00-5:00 p.m. Friday, June 29th, 2018
Venue: Room 418, Electrical Engineering Building, Yuquan Campus
14:00-14:10 Greeting, Introduction of Fuji Semiconductor Business,
Speaker: Naoto Fujishima, Fuji Electric Co., Ltd
14:10-14:40 High I2t capability power modules for x EV power train with leadframe and RC-IGBT combination,
Speaker: Akihiro Osawa, Fuji Electric Co., Ltd.
14:40-15:05 High power next Core(HPnC) package with 3.3kV SiC Hybrid chip combination,
Speaker: Yusuke Sekino, Fuji Electric Co., Ltd.
15:05-15:30 1,700V IGBT module with newly developed 7th Generation technology,
Speaker: Song Chen, Fuji Electric (China) Co., Ltd
15:30-15:40 Short Break
15:40-16:05 Influence of negative voltage between gate and emitter to the turn-off behavior of IGBT device,
Speaker: Fumio Yukawa, Fuji Electric Co., Ltd
16:05-16:30 Expansion of power rating with 7th-Generation “X Series” RC-IGBT Modules for Industrial Applications,
Speaker: Akio Yamano, Fuji Electric Co., Ltd
16:30-16:40 Q&A and Closing
